TSM160N10CZ C0G
MOSFET N-CH 100V 160A TO220Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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The Taiwan Semiconductor Corporation TSM160N10CZ-C0G is an N-Channel Power MOSFET designed for high-current applications. This component features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 160A at 25°C. With a maximum power dissipation of 300W (Tc), it offers a low on-resistance (Rds On) of 5.5mOhm at 30A and 10V. The TSM160N10CZ-C0G utilizes MOSFET technology and is housed in a TO-220-3 package, suitable for through-hole mounting. Key electrical parameters include a gate charge (Qg) of 154 nC at 10V and input capacitance (Ciss) of 9840 pF at 30V. Operating temperature range is -55°C to 175°C (TJ). This device is commonly found in power supply units, motor control, and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 154 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9840 pF @ 30 V |
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