TSM15N50CI C0G
MOSFET N-CH 500V 14A ITO220ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM15N50CI-C0G is a 500V N-Channel Power MOSFET designed for high-performance applications. This device features a continuous drain current of 14A (Tc) and a low on-resistance of 440mOhm at 7A, 10V, ensuring efficient power transfer. The TSM15N50CI-C0G utilizes Metal Oxide technology and is housed in an isolated ITO-220AB package, suitable for through-hole mounting. Key electrical parameters include a gate charge of 39 nC @ 10V and input capacitance of 2263 pF @ 25V. The maximum junction temperature is 150°C. This component is widely utilized in power supply units, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 440mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ITO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2263 pF @ 25 V |
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