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TSM150P04LCS RLG

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TSM150P04LCS RLG

MOSFET P-CHANNEL 40V 22A 8SOP

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Taiwan Semiconductor Corporation TSM150P04LCS-RLG is a P-Channel MOSFET designed for power management applications. This component features a Drain to Source Voltage (Vdss) of 40V and a continuous drain current (Id) of 22A at 25°C. The low on-resistance (Rds On) is rated at a maximum of 15mOhm at 9A and 10V gate-source voltage. With a maximum power dissipation of 12.5W (Tc), it is suitable for demanding thermal environments. The device is available in an 8-SOP package, surface mounted, and supplied on tape and reel. Key electrical characteristics include a gate charge of 48nC (max) and input capacitance of 2783pF (max). This MOSFET is utilized in various industries including automotive and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Rds On (Max) @ Id, Vgs15mOhm @ 9A, 10V
FET Feature-
Power Dissipation (Max)12.5W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-SOP
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2783 pF @ 20 V

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