TSM13N50ACZ C0G
MOSFET N-CHANNEL 500V 13A TO220Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation's TSM13N50ACZ-C0G is a 500V N-Channel Power MOSFET designed for demanding applications. This through-hole component, housed in a TO-220 package, offers a continuous drain current of 13A at 25°C and a maximum power dissipation of 52W at the same temperature. Key electrical characteristics include a Vgs(th) of 4V at 250µA, a maximum gate charge (Qg) of 31 nC at 10V, and input capacitance (Ciss) of 1965 pF at 25V. The Rds On is specified at 480mOhm maximum at 6.5A and 10V drive voltage. Operating across a wide temperature range of -55°C to 150°C, this MOSFET is suitable for power supplies, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 52W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1965 pF @ 25 V |
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