TSM13N50ACI C0G
MOSFET N-CH 500V 13A ITO220ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM13N50ACI-C0G is an N-Channel MOSFET designed for high-voltage applications. This component features a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 13A at 25°C (Tc). The Rds On is specified at a maximum of 480mOhm at 6.5A and 10V gate-source voltage. With a maximum power dissipation of 52W (Tc) and input capacitance (Ciss) of 1965pF at 25V, it is suitable for power switching applications. The device is housed in an isolated ITO-220AB package for through-hole mounting. Key parameters include a gate charge (Qg) of 31nC at 10V and a gate threshold voltage (Vgs(th)) of 4V at 250µA. This MOSFET is utilized in power supplies, industrial control systems, and renewable energy applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 52W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ITO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1965 pF @ 25 V |
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