TSM126CX RFG
MOSFET N-CH 600V 30MA SOT23Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Taiwan Semiconductor Corporation TSM126CX-RFG is a 600V N-Channel depletion mode MOSFET in a SOT-23 package. It offers a continuous drain current of 30mA at 25°C (Tc) and a maximum power dissipation of 500mW (Ta). Key parameters include a Vgs(th) of 1V at 8µA, Rds On of 800 Ohm at 16mA and 10V, and a gate charge of 1.18 nC at 4.5V. Input capacitance (Ciss) is 51.42 pF at 25V. This component is suitable for applications in industrial and consumer electronics requiring high voltage switching. Operating temperature range is -55°C to 150°C. The device is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30mA (Tc) |
| Rds On (Max) @ Id, Vgs | 800Ohm @ 16mA, 10V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 8µA |
| Supplier Device Package | SOT-23 |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.18 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 51.42 pF @ 25 V |
Request a Quote
Clients Also Buy
TSM70N380CH C5G
MOSFET N-CH 700V 11A TO251
TSM043NB04LCZ C0G
40V, 124A, SINGLE N-CHANNEL POWE
TSM60N900CP ROG
MOSFET N-CH 600V 4.5A TO252
