TSM120N10PQ56 RLG
MOSFET N-CH 100V 58A 8PDFNManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM120N10PQ56-RLG is an N-Channel MOSFET designed for high-efficiency power switching applications. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 58A at 25°C (Tc), with a maximum power dissipation of 36W (Tc). The on-resistance (Rds On) is specified at a maximum of 12mOhm at 30A and 10V gate drive. The TSM120N10PQ56-RLG utilizes advanced MOSFET technology, offering low gate charge (Qg) of 145 nC (Max) at 10V and input capacitance (Ciss) of 3902 pF (Max) at 30V. It is packaged in an 8-PowerTDFN (5x6) for surface mounting and supplied on tape and reel. This component is suitable for use in industrial automation, renewable energy systems, and power supply designs. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 36W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-PDFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3902 pF @ 30 V |
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