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TSM120N06LCR RLG

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TSM120N06LCR RLG

MOSFET N-CH 60V 54A 8PDFN

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Taiwan Semiconductor Corporation's TSM120N06LCR-RLG is a N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 54A (Tc) at 25°C. The TSM120N06LCR-RLG offers a low on-resistance (Rds On) of 12mOhm maximum at 10A, 10V, and a maximum gate charge (Qg) of 36.5 nC at 10V, enabling efficient switching. With a maximum power dissipation of 69W (Tc), it is suitable for thermal management in high-power designs. The device operates across a temperature range of -55°C to 150°C (TJ) and is housed in an 8-PDFN (5x6) package, facilitating surface mounting. This MOSFET is commonly utilized in industrial power supplies, automotive electronics, and power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C54A (Tc)
Rds On (Max) @ Id, Vgs12mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)69W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs36.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2116 pF @ 30 V

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