TSM120N06LCR RLG
MOSFET N-CH 60V 54A 8PDFNManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation's TSM120N06LCR-RLG is a N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 54A (Tc) at 25°C. The TSM120N06LCR-RLG offers a low on-resistance (Rds On) of 12mOhm maximum at 10A, 10V, and a maximum gate charge (Qg) of 36.5 nC at 10V, enabling efficient switching. With a maximum power dissipation of 69W (Tc), it is suitable for thermal management in high-power designs. The device operates across a temperature range of -55°C to 150°C (TJ) and is housed in an 8-PDFN (5x6) package, facilitating surface mounting. This MOSFET is commonly utilized in industrial power supplies, automotive electronics, and power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 69W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-PDFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 36.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2116 pF @ 30 V |
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