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TSM10N80CZ C0G

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TSM10N80CZ C0G

MOSFET N-CH 800V 9.5A TO220

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Taiwan Semiconductor Corporation TSM10N80CZ-C0G is an 800V N-Channel Power MOSFET. This device features a continuous drain current (Id) of 9.5A at 25°C (Tc) and a maximum power dissipation of 290W (Tc). The drain-to-source breakdown voltage (Vdss) is rated at 800V. With a maximum on-resistance (Rds On) of 1.05 Ohms at 4.75A and 10V gate-source voltage, this MOSFET is suitable for high-voltage applications. The gate charge (Qg) is a maximum of 53 nC at 10V, and input capacitance (Ciss) is 2336 pF at 25V. The TSM10N80CZ-C0G utilizes Metal Oxide technology and is packaged in a TO-220-3 through-hole configuration. Operating temperature ranges from -55°C to 150°C (TJ). This component is widely used in power supply, lighting, and industrial applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9.5A (Tc)
Rds On (Max) @ Id, Vgs1.05Ohm @ 4.75A, 10V
FET Feature-
Power Dissipation (Max)290W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)800 V
Gate Charge (Qg) (Max) @ Vgs53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2336 pF @ 25 V

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