TSM10N80CZ C0G
MOSFET N-CH 800V 9.5A TO220Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Taiwan Semiconductor Corporation TSM10N80CZ-C0G is an 800V N-Channel Power MOSFET. This device features a continuous drain current (Id) of 9.5A at 25°C (Tc) and a maximum power dissipation of 290W (Tc). The drain-to-source breakdown voltage (Vdss) is rated at 800V. With a maximum on-resistance (Rds On) of 1.05 Ohms at 4.75A and 10V gate-source voltage, this MOSFET is suitable for high-voltage applications. The gate charge (Qg) is a maximum of 53 nC at 10V, and input capacitance (Ciss) is 2336 pF at 25V. The TSM10N80CZ-C0G utilizes Metal Oxide technology and is packaged in a TO-220-3 through-hole configuration. Operating temperature ranges from -55°C to 150°C (TJ). This component is widely used in power supply, lighting, and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 4.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 290W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2336 pF @ 25 V |
Request a Quote
Clients Also Buy
TSM220NB06CR RLG
MOSFET N-CH 60V 8A/35A 8PDFN
TSM7NC60CF C0G
MOSFET N-CH 600V 7A ITO220S
TSM900N06CP ROG
MOSFET N-CHANNEL 60V 11A TO252
