TSM10N80CI C0G
MOSFET N-CH 800V 9.5A ITO220ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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The Taiwan Semiconductor Corporation TSM10N80CI-C0G is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 800 V and a continuous Drain Current (Id) of 9.5 A at 25°C. With a maximum On-Resistance (Rds On) of 1.05 Ohms at 4.75 A and 10 V gate drive, it offers efficient power switching. The device is housed in an isolated ITO-220AB package, suitable for through-hole mounting. Key electrical characteristics include 53 nC maximum gate charge and 2336 pF input capacitance. This MOSFET is suitable for use in power supply units, lighting, and industrial motor control applications. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 4.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ITO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2336 pF @ 25 V |
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