TSM10N60CZ C0G
MOSFET N-CH 600V 10A TO220Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM10N60CZ-C0G is a 600V, 10A N-Channel Power MOSFET in a TO-220-3 package. This component features a maximum continuous drain current of 10A at 25°C and a maximum power dissipation of 166W at the same temperature. The Rds(On) is specified at 750mOhm maximum at 5A and 10V gate drive. Key parameters include a Vgs(th) of 4V maximum at 250µA and a gate charge (Qg) of 45.8 nC at 10V. Input capacitance (Ciss) is 1738 pF maximum at 25V. This device is suitable for applications in power supply, lighting, and motor control. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 166W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 45.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1738 pF @ 25 V |
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