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TSM10N60CZ C0G

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TSM10N60CZ C0G

MOSFET N-CH 600V 10A TO220

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Taiwan Semiconductor Corporation TSM10N60CZ-C0G is a 600V, 10A N-Channel Power MOSFET in a TO-220-3 package. This component features a maximum continuous drain current of 10A at 25°C and a maximum power dissipation of 166W at the same temperature. The Rds(On) is specified at 750mOhm maximum at 5A and 10V gate drive. Key parameters include a Vgs(th) of 4V maximum at 250µA and a gate charge (Qg) of 45.8 nC at 10V. Input capacitance (Ciss) is 1738 pF maximum at 25V. This device is suitable for applications in power supply, lighting, and motor control. The operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Rds On (Max) @ Id, Vgs750mOhm @ 5A, 10V
FET Feature-
Power Dissipation (Max)166W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs45.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1738 pF @ 25 V

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