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TSM10N06CP ROG

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TSM10N06CP ROG

MOSFET N-CHANNEL 60V 10A TO252

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Taiwan Semiconductor Corporation TSM10N06CP-ROG is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 10A at 25°C (Ta). The on-resistance (Rds On) is specified at a maximum of 65mOhm at 10A and 10Vgs. With a maximum power dissipation of 45W (Tc), it is suitable for demanding thermal environments. The MOSFET utilizes Metal Oxide technology and is packaged in a TO-252 (DPAK) surface-mount package, supplied on tape and reel. Key parameters include a gate charge (Qg) of 10.5 nC (max) at 4.5V Vgs and input capacitance (Ciss) of 1100 pF (max) at 30V Vds. The TSM10N06CP-ROG is commonly employed in power supply units, voltage regulators, and motor control circuits across various industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Rds On (Max) @ Id, Vgs65mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)45W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 30 V

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