TSM10N06CP ROG
MOSFET N-CHANNEL 60V 10A TO252Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM10N06CP-ROG is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 10A at 25°C (Ta). The on-resistance (Rds On) is specified at a maximum of 65mOhm at 10A and 10Vgs. With a maximum power dissipation of 45W (Tc), it is suitable for demanding thermal environments. The MOSFET utilizes Metal Oxide technology and is packaged in a TO-252 (DPAK) surface-mount package, supplied on tape and reel. Key parameters include a gate charge (Qg) of 10.5 nC (max) at 4.5V Vgs and input capacitance (Ciss) of 1100 pF (max) at 30V Vds. The TSM10N06CP-ROG is commonly employed in power supply units, voltage regulators, and motor control circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 30 V |