TSM088NA03CR RLG
MOSFET N-CH 30V 61A 8PDFNManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM088NA03CR-RLG is a 30V N-Channel Power MOSFET designed for efficient power switching applications. This device features a low on-resistance of 8.8mOhm at 13A and 10V Vgs, with a continuous drain current capability of 61A at 25°C. Its 56W maximum power dissipation (Tc) and 8-PowerTDFN package (5x6mm) make it suitable for demanding thermal environments. The gate charge is specified at 12.6 nC (Max) @ 10V, and input capacitance (Ciss) is 750 pF (Max) @ 15V. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is commonly utilized in automotive, industrial, and consumer electronics power management systems. The TSM088NA03CR-RLG is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 61A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.8mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 56W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-PDFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 15 V |
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