TSM070NH04LCV RGG
40V, 54A, SINGLE N-CHANNEL POWERManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Taiwan Semiconductor Corporation's TSM070NH04LCV-RGG is a PerFET™ series N-Channel MOSFET designed for high-efficiency power conversion. This device features a 40V drain-source breakdown voltage and a continuous drain current capability of 54A at the case temperature, with 14A specified at ambient. Its low on-resistance of 7mOhm at 27A and 10V gate drive voltage minimizes conduction losses. The TSM070NH04LCV-RGG offers a maximum power dissipation of 36W at the case and operates across a wide temperature range of -55°C to 150°C. Packaged in an 8-PDFN format with dimensions of 3.1x3.1mm, this surface-mount component is suitable for demanding applications in automotive, industrial power, and high-performance computing. The device exhibits a gate charge of 24 nC and an input capacitance of 1376 pF.
Additional Information
Series: PerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 27A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 36W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-PDFN (3.1x3.1) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1376 pF @ 25 V |
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