TSM070NH04CV RGG
40V, 54A, SINGLE N-CHANNEL POWERManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM070NH04CV-RGG is a PerFET™ series N-channel MOSFET designed for robust power switching applications. This device features a Drain to Source Voltage (Vdss) of 40V and a continuous drain current (Id) of 54A at 25°C (Tc), with a typical Rds On of 7mOhm at 27A and 10V. The TSM070NH04CV-RGG offers a maximum power dissipation of 36W (Tc) and a low gate charge (Qg) of 21 nC at 10V. It is packaged in an 8-PDFN (3.1x3.1) surface mount configuration, supplied on tape and reel. This component is suitable for use in automotive, industrial power supplies, and high-efficiency DC-DC conversion systems.
Additional Information
Series: PerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 27A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 36W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 250µA |
| Supplier Device Package | 8-PDFN (3.1x3.1) |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1233 pF @ 25 V |
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