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TSM070NH04CR RLG

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TSM070NH04CR RLG

40V, 54A, SINGLE N-CHANNEL POWER

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Taiwan Semiconductor Corporation's TSM070NH04CR-RLG is an N-Channel Power MOSFET from the PerFET™ series. This device features a Drain-Source Voltage (Vdss) of 40V and supports a continuous drain current of 15A (Ta) and 54A (Tc), with a maximum power dissipation of 46.8W (Tc). The specified Rds On (Max) is 7mOhm at 27A and 10V, with drive voltages ranging from 7V to 10V. Key characteristics include a Gate Charge (Qg) of 19 nC (Max) at 10V and an input capacitance (Ciss) of 1337 pF (Max) at 25V. The TSM070NH04CR-RLG is housed in an 8-PDFNU (5x6) package, suitable for surface mounting, and operates across a junction temperature range of -55°C to 175°C. This component is utilized in applications such as power management, automotive electronics, and industrial systems.

Additional Information

Series: PerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs7mOhm @ 27A, 10V
FET Feature-
Power Dissipation (Max)46.8W (Tc)
Vgs(th) (Max) @ Id3.6V @ 250µA
Supplier Device Package8-PDFNU (5x6)
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1337 pF @ 25 V

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