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TSM070NB04CR RLG

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TSM070NB04CR RLG

MOSFET N-CH 40V 15A/75A 8PDFN

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Taiwan Semiconductor Corporation TSM070NB04CR-RLG is a 40V N-Channel MOSFET in an 8-PDFN (5.2x5.75) package. This device offers a continuous drain current of 15A at 25°C ambient and 75A at 25°C case temperature. The Rds(On) is rated at a maximum of 7mOhm at 15A and 10V Vgs. Key parameters include a Vgs(th) of 4V (max) at 250µA, a gate charge (Qg) of 40nC (max) at 10V, and an input capacitance (Ciss) of 2403pF (max) at 20V. Maximum power dissipation is 3.1W (Ta) and 83W (Tc). Operating temperature range is -55°C to 175°C. This component is suitable for applications in power management, industrial automation, and automotive systems. It is supplied on a Tape & Reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerLDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs7mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2403 pF @ 20 V

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