TSM070NA04LCR RLG
MOSFET N-CH 40V 91A 8PDFNManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation's TSM070NA04LCR-RLG is a 40V N-channel MOSFET designed for high-efficiency power switching applications. This device features a low Rds(on) of 7mOhm at 14A and 10V Vgs, enabling excellent conduction losses. Its continuous drain current capability is 91A at 25°C, with a maximum power dissipation of 113W under thermal management. The TSM070NA04LCR-RLG utilizes a surface mount 8-PDFN (5.2x5.75) package, offering reduced parasitic inductance and capacitance for improved high-frequency performance. It is suitable for demanding applications in automotive, industrial automation, and power supply sectors where robust thermal performance and low on-resistance are critical. The device operates across a temperature range of -55°C to 150°C, with a gate charge (Qg) of 23.5 nC and input capacitance (Ciss) of 1469 pF.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerLDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 91A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 113W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-PDFN (5.2x5.75) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 23.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1469 pF @ 20 V |
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