TSM061NA03CV RGG
MOSFET N-CH 30V 66A 8PDFNManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM061NA03CV-RGG is an N-channel power MOSFET designed for demanding applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current of 66A at 25°C (Tc), with a maximum power dissipation of 44.6W (Tc). The Rds On is specified at a low 6.1mOhm maximum at 16A and 10V Vgs. It utilizes Metal Oxide technology and is housed in an 8-PowerWDFN (3.1x3.1) package, suitable for surface mounting. Key electrical characteristics include a gate charge (Qg) of 19.3 nC maximum at 10V and input capacitance (Ciss) of 1136 pF maximum at 15V. The operating temperature range is -55°C to 150°C (TJ), with a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 2.5V maximum at 250µA. This component is commonly employed in power management, automotive, and industrial systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 66A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.1mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 44.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-PDFN (3.1x3.1) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 19.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1136 pF @ 15 V |
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