TSM060NB06LCZ C0G
60V, 111A, SINGLE N-CHANNEL POWEManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Taiwan Semiconductor Corporation TSM060NB06LCZ-C0G is a single N-channel MOSFET designed for high-power applications. This TO-220 packaged device features a Drain-to-Source Voltage (Vds) of 60V and a continuous Drain Current (Id) of 13A at ambient temperature, scaling to 111A at case temperature. With a low Rds(on) of 6mOhm at 13A and 10V Vgs, it offers efficient power handling, dissipating up to 156W at case temperature. Key parameters include a Gate Charge (Qg) of 107 nC at 10V and Input Capacitance (Ciss) of 6273 pF at 30V. Operating across a temperature range of -55°C to 150°C, this component is suitable for power supply units, automotive systems, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 111A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 156W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6273 pF @ 30 V |
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