TSM060NB06CZ C0G
60V, 111A, SINGLE N-CHANNEL POWEManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation's TSM060NB06CZ-C0G is a single N-channel power MOSFET designed for high-efficiency power management applications. This device features a Drain-Source Voltage (Vdss) of 60 V and a continuous drain current (Id) of 13A at ambient temperature (Ta) and 111A at case temperature (Tc). The Rds On is specified at a maximum of 6mOhm at 13A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 103 nC (max) at 10V and an Input Capacitance (Ciss) of 6842 pF (max) at 30V Vds. The TSM060NB06CZ-C0G utilizes MOSFET technology and is housed in a TO-220-3 package, suitable for through-hole mounting. It offers a maximum power dissipation of 2W (Ta) and 156W (Tc). This component is commonly found in power supplies, automotive electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 111A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 156W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 103 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6842 pF @ 30 V |
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