TSM052N06PQ56 RLG
MOSFET N-CH 60V 100A 8PDFNManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Taiwan Semiconductor Corporation TSM052N06PQ56-RLG is a 60V N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a low Rds(on) of 5.2mOhm at 20A and 10V Vgs, ensuring minimal conduction losses. With a continuous drain current capability of 100A (Tc) and a maximum power dissipation of 83W (Tc), it is suitable for demanding power management tasks. The TSM052N06PQ56-RLG utilizes a compact 8-PowerTDFN (5x6) surface mount package, facilitating compact board layouts in automotive and industrial power systems. Key electrical characteristics include a gate charge of 50 nC @ 10V and input capacitance of 3686 pF @ 30V. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-PDFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3686 pF @ 30 V |
Request a Quote
Clients Also Buy
TSM220NB06CR RLG
MOSFET N-CH 60V 8A/35A 8PDFN
TSM7NC60CF C0G
MOSFET N-CH 600V 7A ITO220S
TSM900N06CP ROG
MOSFET N-CHANNEL 60V 11A TO252
