TSM048NB06LCR RLG
MOSFET N-CH 60V 16A/107A 8PDFNManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM048NB06LCR-RLG MOSFET, N-Channel, 60V Drain-to-Source Voltage (Vdss). This device features a low on-resistance of 4.8mOhm at 16A and 10V Vgs, with a continuous drain current (Id) of 16A at 25°C ambient and 107A at 25°C case temperature. Power dissipation is rated at 3.1W ambient and 136W case. The TSM048NB06LCR-RLG utilizes an 8-PDFN (5.2x5.75) surface mount package and operates across a junction temperature range of -55°C to 175°C. Key parameters include a gate charge (Qg) of 105 nC maximum at 10V Vgs and input capacitance (Ciss) of 6253 pF maximum at 30V Vds. This component is suitable for applications in power management and high-current switching solutions across various industrial sectors. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerLDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 107A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 136W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-PDFN (5.2x5.75) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6253 pF @ 30 V |
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