TSM045NA03CR RLG
MOSFET N-CH 30V 108A 8PDFNManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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The Taiwan Semiconductor Corporation TSM045NA03CR-RLG is an N-Channel Power MOSFET designed for demanding power management applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 108A at 25°C (Tc), with a maximum power dissipation of 89W (Tc). The low on-resistance of 4.5mOhm at 18A and 10V Vgs makes it suitable for high-efficiency switching. It is packaged in an 8-PDFN (5x6) for surface mounting and operates across a temperature range of -55°C to 150°C (TJ). Key parameters include a gate charge of 19 nC (max) at 10V Vgs and an input capacitance of 1194 pF (max) at 15V Vds. This MOSFET is commonly utilized in industrial power supplies, automotive electronics, and high-power conversion systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 108A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-PDFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1194 pF @ 15 V |
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