TSM043NH04LCR RLG
40V, 54A, SINGLE N-CHANNEL POWERManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation's TSM043NH04LCR-RLG is a PerFET™ series N-Channel MOSFET designed for high-efficiency power conversion. This surface-mount device features a 40V drain-to-source voltage rating and a continuous drain current capability of 54A at the case temperature, with 20A at ambient. Its low on-resistance of 4.3mOhm maximum at 27A and 10V gate-source drive makes it suitable for demanding applications. The 8-PDFNU (5x6) package with wettable flanks facilitates robust soldering and automated assembly. Key parameters include a maximum gate charge of 42 nC and input capacitance of 2480 pF. Operating across a wide temperature range of -55°C to 175°C, this MOSFET is utilized in automotive, industrial power supplies, and consumer electronics where reliable power management is critical. The device supports gate drive voltages from 4.5V to 10V.
Additional Information
Series: PerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 27A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-PDFNU (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2480 pF @ 25 V |
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