TSM043NH04CR RLG
40V, 54A, SINGLE N-CHANNEL POWERManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Taiwan Semiconductor Corporation's PerFET™ series TSM043NH04CR-RLG is a single N-channel MOSFET designed for high-performance power applications. This device features a 40V Drain-Source Voltage (Vdss) and a continuous drain current of 54A at 25°C case temperature, with a maximum power dissipation of 100W. The TSM043NH04CR-RLG exhibits a low on-resistance (Rds On) of 4.3mOhm at 27A and 10V Vgs. It is supplied in an 8-PDFNU (5x6) surface mount package with wettable flanks for robust soldering. Key parameters include a gate charge (Qg) of 37 nC maximum at 10V and input capacitance (Ciss) of 2531 pF maximum at 25V. Operating temperature ranges from -55°C to 175°C. This component is suitable for use in automotive, industrial, and high-efficiency power conversion systems.
Additional Information
Series: PerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 27A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 250µA |
| Supplier Device Package | 8-PDFNU (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2531 pF @ 25 V |
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