TSM043NB04LCZ C0G
40V, 124A, SINGLE N-CHANNEL POWEManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Taiwan Semiconductor Corporation TSM043NB04LCZ-C0G is an N-Channel MOSFET designed for high-power switching applications. This component features a drain-source voltage (Vdss) of 40V and offers a continuous drain current (Id) of 16A at ambient temperature (Ta) and 124A at case temperature (Tc). With a low on-resistance (Rds On) of 4.3mOhm at 16A and 10V, it minimizes conduction losses. The device supports gate drive voltages from 4.5V to 10V and has a maximum gate charge (Qg) of 76 nC at 10V. Input capacitance (Ciss) is specified at 4387 pF at 20V. Dissipation capabilities are 2W (Ta) and 125W (Tc). Operating temperature range is -55°C to 150°C. The TSM043NB04LCZ-C0G is packaged in a TO-220-3 through-hole configuration, making it suitable for applications in automotive, industrial power supplies, and electric vehicle systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 124A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4387 pF @ 20 V |
Request a Quote
Clients Also Buy
TSM70N380CH C5G
MOSFET N-CH 700V 11A TO251
TSM60N900CP ROG
MOSFET N-CH 600V 4.5A TO252
TSM60NE200CIT C0G
MOSFET
