TSM033NA04LCR RLG
MOSFET N-CH 40V 141A 8PDFNManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM033NA04LCR-RLG is an N-Channel Power MOSFET featuring a 40V drain-source voltage. This device offers a continuous drain current of 141A at 25°C (Tc) and a maximum power dissipation of 125W (Tc). The on-resistance (Rds On) is specified at a low 3.3mOhm at 20A and 10V gate-source voltage. It is packaged in an 8-PDFN (5x6) surface mount configuration, supplied on tape and reel. Key parameters include a gate charge (Qg) of 47 nC (max) at 10V and input capacitance (Ciss) of 3130 pF (max) at 20V. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is suitable for applications in automotive and industrial power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 141A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-PDFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3130 pF @ 20 V |
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