TSM033NA03CR RLG
MOSFET N-CH 30V 129A 8PDFNManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM033NA03CR-RLG is an N-Channel Power MOSFET designed for demanding power management applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 129A at 25°C, with a maximum power dissipation of 96W. The low on-resistance of 3.3mOhm at 21A and 10V gate-source voltage ensures efficient operation. It is packaged in an 8-PDFN (5x6) surface-mount configuration, suitable for high-density designs. Key parameters include a maximum gate charge of 31 nC and input capacitance of 1850 pF. Operating across a temperature range of -55°C to 150°C, this MOSFET finds application in areas such as automotive power systems, industrial motor control, and high-power DC-DC converters. The device is supplied on a tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 129A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-PDFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1850 pF @ 15 V |
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