TSM032NH04CR RLG
40V, 81A, SINGLE N-CHANNEL POWERManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Taiwan Semiconductor Corporation's TSM032NH04CR-RLG, a PerFET™ series N-channel MOSFET, offers a 40V drain-to-source voltage and a continuous drain current of 81A at 25°C (Tc), with a maximum continuous drain current of 25A at 25°C (Ta). This surface-mount device features a low Rds On of 3.2mOhm at 40A and 10V Vgs, with a maximum power dissipation of 115W (Tc). The component utilizes Metal Oxide MOSFET technology and is housed in an 8-PDFNU (5x6) package, supplied on tape and reel. Key parameters include a gate charge of 45 nC @ 10V and input capacitance of 2896 pF @ 25V. Operating temperature range is -55°C to 175°C (TJ), with a maximum gate-source voltage of ±20V and a threshold voltage of 3.6V @ 250µA. This MOSFET is suitable for applications in power management, automotive systems, and industrial power supplies.
Additional Information
Series: PerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta), 81A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 250µA |
| Supplier Device Package | 8-PDFNU (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2896 pF @ 25 V |
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