TSM026NA03CR RLG
MOSFET N-CH 30V 168A 8PDFNManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation's TSM026NA03CR-RLG is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source voltage rating and a continuous drain current capability of 168A at 25°C (Tc), with a maximum power dissipation of 125W (Tc). The low on-resistance of 2.6mOhm at 24A and 10V Vgs, coupled with a low gate charge of 41 nC (Max) @ 10V, ensures efficient switching performance.
The TSM026NA03CR-RLG is housed in an 8-PowerTDFN (5x6) package, suitable for compact surface mount designs. Its operating temperature range of -55°C to 150°C (TJ) makes it robust for various environmental conditions. This MOSFET is utilized in power management, automotive, and industrial systems requiring high current handling and efficient power conversion. It is supplied on tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 168A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-PDFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2540 pF @ 15 V |
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