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TSM025NH04CR RLG

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TSM025NH04CR RLG

40V, 100A, SINGLE N-CHANNEL POWE

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Taiwan Semiconductor Corporation PerFET™ TSM025NH04CR-RLG is a 40V N-channel Power MOSFET with a continuous drain current of 100A (Tc) and 26A (Ta). It features a low on-resistance of 2.5mOhm at 50A, 10V, and a maximum power dissipation of 136W (Tc). The device utilizes MOSFET technology and is housed in an 8-PDFNU (5x6) surface mount package with wettable flanks for enhanced solder joint reliability. Key parameters include a gate charge of 59 nC @ 10V and input capacitance of 3794 pF @ 25V. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in automotive, industrial power supplies, and power management systems.

Additional Information

Series: PerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount, Wettable Flank
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs2.5mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)136W (Tc)
Vgs(th) (Max) @ Id3.6V @ 250µA
Supplier Device Package8-PDFNU (5x6)
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3794 pF @ 25 V

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