TSM025NB04LCR RLG
MOSFET N-CH 40V 24A/161A 8PDFNManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM025NB04LCR-RLG is an N-channel Power MOSFET designed for high-efficiency power conversion. This device features a drain-source voltage (Vdss) of 40V and offers a continuous drain current (Id) of 24A at 25°C ambient and 161A at 25°C case temperature. The TSM025NB04LCR-RLG exhibits a low on-resistance (Rds On) of 2.5 mOhm at 24A and 10V gate-source voltage. Power dissipation is rated at 3.1W (Ta) and 136W (Tc). The component is housed in an 8-PDFN (5.2x5.75) surface mount package, facilitating compact board designs. Key electrical parameters include a maximum gate charge (Qg) of 112 nC at 10V and input capacitance (Ciss) of 6435 pF at 20V. The operating temperature range is -55°C to 175°C. This MOSFET is suitable for applications in power supplies, automotive systems, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerLDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta), 161A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 136W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-PDFN (5.2x5.75) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 112 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6435 pF @ 20 V |
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