TSM024NA04LCR RLG
MOSFET N-CH 40V 170A 8PDFNManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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The Taiwan Semiconductor Corporation TSM024NA04LCR-RLG is a high-performance N-Channel MOSFET designed for demanding power applications. This component features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 170A at 25°C, with a maximum power dissipation of 125W (Tc). Its low on-resistance of 2.4mOhm at 25A and 10V Vgs, coupled with a gate charge of 67 nC, ensures efficient switching. The TSM024NA04LCR-RLG utilizes 8-PDFN (5x6) surface mount packaging, providing excellent thermal performance. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for use in automotive, industrial power supplies, and electric vehicle systems. Its input capacitance (Ciss) is 4224 pF at 20V, with a gate-source voltage (Vgs) tolerance up to ±20V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 170A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-PDFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4224 pF @ 20 V |
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