TSM020N04LCR RLG
MOSFET N-CH 40V 170A 8PDFNManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM020N04LCR-RLG is an N-Channel Power MOSFET designed for high-performance applications. This device features a 40V drain-source breakdown voltage and a continuous drain current capability of 170A at 25°C (Tc), with a maximum power dissipation of 104W (Tc). The on-resistance (Rds On) is specified at a low 2mOhm at 27A and 10V Vgs. The MOSFET is housed in an 8-PDFN (5x6) surface-mount package, supplied on tape and reel. Key parameters include a gate charge (Qg) of 150nC (max) at 10V and input capacitance (Ciss) of 7942pF (max) at 20V. Operating temperature range is -55°C to 150°C. This component is suitable for use in automotive, industrial, and power supply applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 170A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 27A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-PDFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7942 pF @ 20 V |
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