TSM018NA03CR RLG
MOSFET N-CH 30V 185A 8PDFNManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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The Taiwan Semiconductor Corporation TSM018NA03CR-RLG is an N-Channel MOSFET designed for demanding applications. This surface mount device features a 30V drain-to-source voltage and a continuous drain current of 185A at 25°C, with a maximum power dissipation of 104W. Its low on-resistance of 1.8mOhm is achieved at 29A and 10V gate-source voltage. The TSM018NA03CR-RLG is housed in an 8-PDFN (5x6) package and operates across a wide temperature range of -55°C to 150°C. Key electrical characteristics include a gate charge (Qg) of 56nC at 10V and input capacitance (Ciss) of 3479pF at 15V. This component is suitable for power management solutions in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 185A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 29A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-PDFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3479 pF @ 15 V |
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