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TSM015NA03CR RLG

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TSM015NA03CR RLG

MOSFET N-CH 30V 205A 8PDFN

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Taiwan Semiconductor Corporation TSM015NA03CR-RLG is a 30V N-Channel Power MOSFET designed for high-current applications. This device features a low on-resistance of 1.5mOhm at 32A and 10Vgs, enabling efficient power transfer. With a continuous drain current capability of 205A at 25°C and a maximum power dissipation of 104W, it is suitable for demanding power management tasks. The device is housed in a compact 8-PDFN (5x6) surface-mount package, facilitating dense board layouts. Key electrical parameters include a gate charge of 67nC (max) at 10Vgs and input capacitance of 4243pF (max) at 15Vds. Operating temperature ranges from -55°C to 150°C, ensuring reliability across various environments. This MOSFET finds application in sectors such as automotive, industrial power supplies, and battery management systems. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C205A (Tc)
Rds On (Max) @ Id, Vgs1.5mOhm @ 32A, 10V
FET Feature-
Power Dissipation (Max)104W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4243 pF @ 15 V

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