TSG65N195CE RVG
650V, 11A, PDFN88, E-MODE GAN TRManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSG65N195CE-RVG is a 650V, 11A E-Mode Gallium Nitride (GaN) FET housed in an 8x8 mm PDFN package. This device offers superior switching performance and reduced energy loss compared to traditional silicon-based solutions, making it ideal for high-frequency power conversion applications. Its robust design and efficient operation cater to demanding requirements in power supplies, electric vehicle charging, industrial motor control, and renewable energy systems. The TSG65N195CE-RVG's high breakdown voltage and current handling capabilities, combined with low on-resistance, contribute to enhanced system efficiency and power density. Supplied on tape and reel for automated assembly processes, this component is a key enabler for next-generation power electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
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