TSG65N190CR RVG
650V, 11A, PDFN56, E-MODE GAN TRManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation's TSG65N190CR-RVG is a 650V, 11A enhancement-mode Gallium Nitride (GaN) transistor in a PDFN56 package. This device is engineered for high-efficiency power conversion applications, leveraging GaN technology for superior performance characteristics compared to traditional silicon-based solutions. The TSG65N190CR-RVG offers low on-resistance and fast switching speeds, crucial for optimizing power density and reducing energy loss in demanding systems. Its robust construction and advanced material properties make it suitable for use in power supplies, electric vehicle charging, industrial motor drives, and renewable energy inverters. The Tape & Reel packaging ensures compatibility with automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
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