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TQM130NB06CR RLG

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TQM130NB06CR RLG

MOSFET N-CH 60V 10A/50A 8PDFNU

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Taiwan Semiconductor Corporation's TQM130NB06CR-RLG is an N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-source breakdown voltage and supports continuous drain currents of 10A at ambient temperature and 50A at case temperature. Its low on-resistance, specified at 13mOhm maximum at 10A and 10V, ensures efficient power transfer. The MOSFET offers a maximum gate charge of 40 nC at 10V, contributing to faster switching speeds. With a power dissipation capability of 3.1W (ambient) and 83W (case), it is suitable for high-power density designs. The TQM130NB06CR-RLG is housed in an 8-PDFNU (5x6) package with wettable flank technology for enhanced solder joint reliability. Qualified to AEC-Q101 standards, this device is engineered for automotive applications. Operating across a wide junction temperature range of -55°C to 175°C, it provides robust performance in challenging environments.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount, Wettable Flank
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs13mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id3.8V @ 250µA
Supplier Device Package8-PDFNU (5x6)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2234 pF @ 30 V
QualificationAEC-Q101

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