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TQM070NB04CR RLG

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TQM070NB04CR RLG

MOSFET N-CH 40V 15A/75A 8PDFNU

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Taiwan Semiconductor Corporation TQM070NB04CR-RLG is an N-Channel MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 40V and offers a continuous drain current (Id) of 15A at ambient temperature and 75A at case temperature. The Rds On is specified at a maximum of 7mOhm at 15A and 10V gate-source voltage. The device boasts a low gate charge (Qg) of 42 nC at 10V and input capacitance (Ciss) of 3125 pF at 20V. With a maximum power dissipation of 3.1W (Ta) and 83W (Tc), it is suitable for high-power switching applications. The TQM070NB04CR-RLG is packaged in an 8-PDFNU (5x6) surface mount configuration with wettable flanks for enhanced solder joint reliability. Operating temperature ranges from -55°C to 175°C (TJ). This component is qualified to AEC-Q101 automotive standards, making it suitable for automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount, Wettable Flank
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs7mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id3.8V @ 250µA
Supplier Device Package8-PDFNU (5x6)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3125 pF @ 20 V
QualificationAEC-Q101

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