TQM043NH04LCR RLG
40V, 54A, SINGLE N-CHANNEL POWERManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Taiwan Semiconductor Corporation's TQM043NH04LCR-RLG is an N-Channel PerFET™ power MOSFET designed for demanding applications. This AEC-Q101 qualified component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 54A at 25°C case temperature, with a continuous drain current of 20A at 25°C ambient temperature. The device exhibits a low on-resistance (Rds On) of 4.3mOhm maximum at 27A and 10V Vgs. Key specifications include a maximum power dissipation of 100W (Tc), a gate charge (Qg) of 42nC maximum at 10V Vgs, and input capacitance (Ciss) of 2480pF maximum at 25V Vds. The TQM043NH04LCR-RLG is presented in an 8-PDFN (5x6) surface mount package, supplied on tape and reel. This component is suitable for automotive, industrial, and power management applications.
Additional Information
Series: PerFET™RoHS Status: unknownManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 27A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-PDFN (5x6) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2480 pF @ 25 V |
| Qualification | AEC-Q101 |
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