TQM033NB04CR RLG
MOSFET N-CH 40V 21A/121A PDFN56UManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TQM033NB04CR-RLG is an N-Channel Power MOSFET designed for demanding applications. This AEC-Q101 qualified component features a Drain-to-Source Voltage (Vdss) of 40V. It offers a continuous drain current of 21A at ambient temperature (Ta) and 121A at case temperature (Tc), with a maximum power dissipation of 3.1W (Ta) and 107W (Tc). The device exhibits a low on-resistance (Rds On) of 3.3mOhm at 21A and 10V Vgs. The TQM033NB04CR-RLG utilizes a compact 8-PDFNU (5x6) package with wettable flanks for enhanced solder joint reliability, suitable for surface mount applications. Key electrical characteristics include a maximum gate charge (Qg) of 87 nC at 10V and input capacitance (Ciss) of 4917 pF at 20V Vds. This MOSFET is engineered for automotive and industrial sectors requiring high efficiency and robust performance. It operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 121A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 107W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Supplier Device Package | 8-PDFNU (5x6) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4917 pF @ 20 V |
| Qualification | AEC-Q101 |
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