US1MHR3G
DIODE GEN PURP 1A DO214ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's US1MHR3G is a general-purpose diode designed for demanding applications. This AEC-Q101 qualified component features a 1000 V reverse voltage (Vr) and a 1 A average rectified current (Io). With a maximum forward voltage (Vf) of 1.7 V at 1 A, it exhibits a reverse leakage current of only 5 µA at its maximum reverse voltage. The diode operates within a junction temperature range of -55°C to 150°C and boasts a reverse recovery time (trr) of 75 ns, classifying it as a fast recovery diode. Its low capacitance, specified at 10 pF @ 4V, 1MHz, makes it suitable for high-frequency circuits. The US1MHR3G is housed in a DO-214AC (SMA) surface mount package, supplied on tape and reel. This component is commonly utilized in automotive, industrial, and consumer electronics where reliable rectification and voltage blocking are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 10pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 1000 V |
| Qualification | AEC-Q101 |
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