US1K R3G
DIODE GEN PURP 800V 1A DO214ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1A US1K-R3G. This general-purpose diode, designated US1K-R3G by Taiwan Semiconductor Corporation, features a 1A average rectified current (Io) and a maximum DC reverse voltage (Vr) of 800V. The forward voltage (Vf) is 1.7V at 1A, with a reverse leakage current of 5 µA at 800V. With a reverse recovery time (trr) of 75 ns, this device is classified as fast recovery. It is housed in a DO-214AC (SMA) surface-mount package and operates across a junction temperature range of -55°C to 150°C. Typical applications include power supply rectification, switching power supplies, and general-purpose rectification in industrial and consumer electronics. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 10pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 800 V |
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