US1G R3G
DIODE GEN PURP 400V 1A DO214ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation US1G-R3G is a general-purpose rectifier diode. This component features a maximum repetitive reverse voltage (Vr) of 400V and an average rectified forward current (Io) of 1A. The forward voltage drop (Vf) is rated at 1V maximum at 1A. Designed for surface mount applications, it is housed in a DO-214AC (SMA) package. Key specifications include a reverse leakage current of 5 µA at 400V and a junction capacitance of 15pF at 4V and 1MHz. The diode exhibits a fast recovery time (trr) of 50 nanoseconds, classifying it within the fast recovery speed category. Operating junction temperatures range from -55°C to 150°C. This component is suitable for various applications including power supplies, switching circuits, and general rectification in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 400 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 400 V |
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