US1DHR3G
DIODE GEN PURP 200V 1A DO214ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation US1DHR3G is a general-purpose diode with a 200V reverse voltage rating and 1A average rectified current capability. This component features a fast recovery time of 50 ns, classifying it within the fast recovery category (>200mA, <=500ns). The device is housed in a DO-214AC (SMA) surface mount package and operates across a junction temperature range of -55°C to 150°C. Forward voltage drop is a maximum of 1V at 1A. Reverse leakage current is specified at 5 µA at 200V. The US1DHR3G is qualified to AEC-Q101 standards, making it suitable for automotive applications. Its capacitance at 4V and 1MHz is rated at 15pF. This component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 200 V |
| Qualification | AEC-Q101 |
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