US1BHR3G
DIODE GEN PURP 100V 1A DO214ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
Quality Control: Learn More
Taiwan Semiconductor Corporation US1BHR3G is a general-purpose diode with a 100V reverse voltage rating and a 1A average rectified forward current. This AEC-Q101 qualified component features a fast recovery time of 50ns and a maximum forward voltage of 1V at 1A. Encapsulated in a DO-214AC (SMA) surface mount package, it offers a low reverse leakage of 5µA at 100V and a junction capacitance of 15pF at 4V and 1MHz. Operating across a temperature range of -55°C to 150°C, this automotive-grade diode is suitable for applications in the automotive industry. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
TST20U60C
DIODE SCHOTTKY 60V 10A TO220AB
S4M M6G
DIODE GEN PURP 4A DO214AB
UG12JH
20NS, 12A, 600V, ULTRA FAST RECO
