US1B R3G
DIODE GEN PURP 100V 1A DO214ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation US1B-R3G is a general-purpose diode featuring a 100V reverse voltage rating and a 1A forward current capacity. This surface-mount device is housed in a compact DO-214AC (SMA) package. Key electrical characteristics include a maximum forward voltage of 1V at 1A and a low reverse leakage current of 5µA at 100V. The diode exhibits a capacitance of 15pF at 4V and 1MHz. With a reverse recovery time of 50ns, it is classified as a fast recovery diode, suitable for applications requiring switching speeds up to 500ns with currents exceeding 200mA. Operating temperature ranges from -55°C to 150°C. This component is commonly utilized in power supply rectification, switching power supplies, and general-purpose rectification across industrial and consumer electronics sectors. The US1B-R3G is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V |
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