US1A M2G
DIODE GEN PURP 50V 1A DO214ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
Quality Control: Learn More
Taiwan Semiconductor Corporation's US1A-M2G is a general-purpose diode designed for surface mount applications. This component features a maximum DC reverse voltage of 50V and can handle an average rectified current of 1A. The forward voltage drop is rated at 1V maximum at 1A. With a reverse leakage current of 5 µA at 50V and a reverse recovery time of 50 ns, this diode is suitable for applications requiring fast switching characteristics. Its capacitance is 15pF at 4V and 1MHz. The DO-214AC (SMA) package is supplied in Tape & Reel (TR) for automated assembly. This device operates across a junction temperature range of -55°C to 150°C and finds utility in various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 50 V |
Request a Quote
Clients Also Buy
TST20U60C
DIODE SCHOTTKY 60V 10A TO220AB
S4M M6G
DIODE GEN PURP 4A DO214AB
UG12JH
20NS, 12A, 600V, ULTRA FAST RECO
